Nickel induced lateral crystallization of amorphous silicon with and without electric field has been studied. Dendritic silicon length. The behavior growth behavior is observed, with crystallites of a few hundred nanometers in width and up to a few microns in length can be understood from the preferential epitaxial growth of silicon from the (1 1 1) facets of the NiSi2 precipitate, which forms during the early stage of the annealing process. The dendritic growth fronts are different with and without electric field in the nickel induced lateral crystallization process. Electric field is found to be beneficial in increasing the lateral crystallization rate and improving the film crystallinity. Joule heating plays an important role as well to enhance the lateral crystallization. (C) 2004 Elsevier B.V. All rights reserved.