Phosphorus is a common and desired n-type dopant of SiC, but it turned out that doping by diffusion or during growth is rarely successful. To avoid the efforts and the creation of damage if ion implantation is used instead, these techniques were, though, highly desirable. In this work, we have investigated theoretically the experimental observation that phosphorus obviously hardly diffuses into the material. Not the diffusivity of the dopant but its addiction to occupy a three-fold coordinated surface site are critical, together with the way the surface affects the bulk migration barriers of the dopants. Whereas the most common growth direction for 4H-SiC, the polar silicon terminated (0001) surface, seems to be least appropriate for the incorporation of phosphorus; atoms, growth along the nonpolar [11 (2) over cap 0] provides a good possibility to achieve efficient P-doping during growth. (c) 2004 Elsevier B.V All rights reserved.