Nitrogen-doped (N-doped) p-type ZnTe films and ZnTe-ZnSe superlattices (SLs) were prepared on GaAs (100) substrates by hot wall epitaxy (HWE) using NH3 gas and Zn3N2 as a codoping source. We have investigated the compensation effect of Zn3N2 and optimized the growth conditions. Then the nitrogen-doped ZnTe films and ZnTe-ZnSe superlattices of high crystal quality with a high hole concentration were obtained. (c) 2004 Elsevier B.V. All rights reserved.