Organic static induction transistors (SITs) were fabricated with a Au(source)/organic/patterned-Au(gate)/organic/patternedAu(drain) structure employing a new concept, 'spontaneous patterning of higher order structures' (SPHOS). A selective mechanical exfoliation process was developed to replicate the pattern of gate electrode after a pre-patterned drain electrode. The I-V curve measured between the gate and the drain electrodes exhibited a good Schottky characteristic and the drain current of the SIT with higher order structure showed a clear modulation by the gate voltage. (c) 2004 Elsevier B.V. All rights reserved.