Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

Conde JC; Gonzalez P; Lusquinos F; Chiussi S; Serra J; Leon B

Applied Surface Science, Vol.248, No.1-4, 461-465, 2005

DOI10.1016/j.apsusc.2005.03.099 Export Citation

Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

Conde JC, Gonzalez P, Lusquinos F, Chiussi S, Serra J, Leon B

In this work, the finite elements analysis using ANSYS (R) (8.0) of the heteroepitaxial SiGe alloy formation induced by excimer lasers is presented. The numerical simulation of the temperature distribution induced by KrF excimer laser (energy densities 0.50

Keywords:epitaxial growth;finite elements method;pulsed laser induced epitaxy (PLIE)