The field emission current density j from the ternary alloy AlxGa1-xN is theoretically calculated as a function of composition x for 0 < x < 1. By considering the doping and background concentrations and the internal field emission as sources of the carrier concentration n, we use a fully exact scheme to calculate j from AlxGa1-xN. It is found that the exact x-dependence of n yields theoretical j in agreement with experiment. (c) 2005 Elsevier B.V. All rights reserved.