Phase analysis of TaN/Ta barrier layers in sub-micrometer trench structures for Cu interconnects

Traving M; Zienert I; Zschech E; Schindler G; Steinhogl W; Engelhardt A

Applied Surface Science, Vol.252, No.1, 11-17, 2005

DOI10.1016/j.apsusc.2005.01.104 Export Citation

Phase analysis of TaN/Ta barrier layers in sub-micrometer trench structures for Cu interconnects

Traving M, Zienert I, Zschech E, Schindler G, Steinhogl W, Engelhardt A

The resistance behavior of TaN/Ta diffusion barrier bilayers has been investigated. The dependence of the Ta-phase on the TaN layer thickness was examined by means of X-ray micro-diffraction and resistivity measurements. Furthermore, the influence of the geometry of a damascene trench structure on the Ta-phase of the deposited TaN/Ta barrier bilayers has been studied and compared to the results obtained with blanket wafers. The influence of the Ta-phase on the via resistance of Cu interconnects is discussed. (c) 2005 Elsevier B.V. All rights reserved.

Keywords:diffusion barrier;damascene trench;TaN;Ta;Ta-phase;X-ray diffraction;resistivity