Indium nitrate and thiourea were used as the precursor solutions for preparing indium sulfide thin films using Chemical Spray Pyrolysis (CSP) technique. Films having various In/S ratios were characterized using X-Ray Diffraction (XRD), Energy Dispersive X-ray Analysis (EDX), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), optical absorption, transmission and photosensitivity measurements. Sample having In/S ratio 2/3 showed better crystallinity with band gap 2.66 eV Depth profile of the sample also indicated the formation of indium sulfide. It was also observed that In/S ratio in the initial precursor solution determined the composition as well as electrical properties of the films. Maximum photosensitivity was observed for the sample prepared using solution having In/S ratio 2/4. (c) 2005 Elsevier B.V All rights reserved.