In this presentation we focus on the synthesis of buried multielemental semiconductor nanoparticles by sequential high dose ion implantation and post-implantation annealing. Nanocluster formation and alloying was studied by Raman- Rutherford Backscattering Spectroscopy (RBS) and X-ray diffraction analysis (XRD) on a materials library of CdSx,Se1-x, nanoclusters buried in thermally grown SiO2 on silicon. Characteristic peak shifts of the LO-Rainan signal and XRD-peaks due to varying Sand Se-fraction indicate that the ion beam synthesized clusters consist of a solid Solution of Cd, S and Se. In addition the influence of the implanted dose ratios on the structural evolution of the nanocluster-SiO2 system will be discussed. (c) 2005 Published by Elsevier B.V.