In this work was investigated numerically and experimentally a simple laser doping method employing borosilicate (BSG) glass films as dopant sources which are deposited onto Si by the spin-coating technique. Both short (20 ns) and long (200 ns) pulse duration Excimer laser beams were used to deposit a large amount of energy in short time onto the near-surface region. Under suitable conditions, the irradiation leads to surface melting and dopant incorporation by liquid phase diffusion from the surface. Boron distribution profiles in the two-pulse duration regimes were studied as well as their electrical properties, and the junction formation of less than 25 nm in depth was demonstrated. (c) 2005 Elsevier B.V. All rights reserved.