Structure of the SiC (0001) 3 X 3 reconstruction studied by surface X-ray diffraction

Voegeli W; Akimoto K; Aoyama T; Sumitani K; Nakatani S; Tajiri H; Takahashi T; Hisada Y; Mukainakano S; Zhang X; Sugiyama H; Kawata H

Applied Surface Science, Vol.252, No.15, 5259-5262, 2006

DOI10.1016/j.apsusc.2005.12.019 Export Citation

Structure of the SiC (0001) 3 X 3 reconstruction studied by surface X-ray diffraction

Voegeli W, Akimoto K, Aoyama T, Sumitani K, Nakatani S, Tajiri H, Takahashi T, Hisada Y, Mukainakano S, Zhang X, Sugiyama H, Kawata H

The surface structure of the 3 x 3 reconstruction of the 4H-SiC (0001) surface was investigated with surface X-ray diffraction (SXRD). Of the studied models, the twist model proposed by Starke et al. [U. Starke, J. Schardt, J. Bernhardt, M. Franke, K. Reuter, H. Wedler, K. Heinz, J. Furthmuller, P. Kackell, F. Bechstedt, Phys. Rev. Lett. 80 (1998) 758] gave the best fit to the experimental data. The structural parameters were determined accurately. (c) 2005 Elsevier B.V. All rights reserved.

Keywords:silicon carbide;SiC;surface structure;reconstruction;X-ray diffraction