Dynamic SIMS is an established tool for the characterization of dielectric layers in semiconductors, both for contaminant levels and for composition. As the silicon-based semiconductor industry moves towards the use of copper rather than aluminum, there is also a need to use lower k-dielectric materials to reduce RC delays and to reduce cross-talk between closely spaced metal lines. New dielectric materials pose serious challenges for implementation into semiconductor processes and also for the analytical scientist doing measurements on them. The move from inorganic materials such as SiO2 to organic or carbon-rich low-k materials is a large change for the SIMS analyst. Low-k dielectric films from different sources can be very different materials with different analytical issues. A SIMS challenge for these materials is dealing with their insulating nature and their also fragility, particularly for porous films. These materials can be extremely sensitive to electron beam damage during charge neutralization, leading to difficulties in determining depth scales and introducing unknown errors to secondary ion counts and their subsequent conversion to concentrations. This paper presents details regarding an investigation of the effects of electron beam exposure on a low-k material. These effects and their potential impact on SIMS data will be investigated using FT-IR, TOF-SIMS, AIM and stylus profilometry. (c) 2006 Elsevier B.V. All rights reserved.