Dimensional scaling of classical CMOS silicon devices, used to improve device performance, has neared the end of its usefulness due to unacceptable increases in device standby current. This requires changes in device structure and materials to continue to provide improvements in circuit speed and operation. Emerging materials for device development include metal gates, fully silicided gate electrodes or FUSI, and high permitivity-constant gate dielectric materials. The effect these materials changes will have on SIMS depth profiling for device development and characterization is investigated with measurements in alternative materials to illustrate the future for depth profiling for semiconductor development. (c) 2006 Elsevier B.V. All rights reserved.