Vanadium oxide VOx films were fabricated by RF magnetron sputtering on various metal buffer layers or silica glass substrates at a substrate temperature of 400 degrees C. V2O5 film was fabricated on a silica glass substrate, and VO2 films were fabricated on V, W, Fe, Ni, Ti, and Pt metal buffer layers. The transition temperature of the sample on the V buffer layer was 68 degrees C and that on the W buffer layer was 53 degrees C. The VO2 film was also fabricated on the V buffer layer by non-reactive sputtering using a V2O5 target at a substrate temperature of 400 C. (c) 2005 Elsevier B.V. All rights reserved.