p-Type ZnO thin films have been realized via doping Li as acceptor by using pulsed laser deposition. In our experiment, Li2CO3 was used as Li precursor, and the growth temperature was varied from 400 to 600 degrees C in pure O-2 ambient. The Li-doped ZnO film prepared at 450 degrees C possessed the lowest resistivity of 34 Omega cm with a Hall mobility of 0.134 cm(2) V-1 s(-1) and hole concentration of 1.37 x 10(18) cm(-3). X-ray diffraction (XRD) measurements showed that the Li-doped ZnO films grown at different substrate temperatures were of completely (002)-preferred orientation. (c) 2006 Elsevier B.V. All rights reserved.