In this paper, we demonstrate the novel beta-Ga2O3 nanostructures synthesized by microwave plasma chemical vapor deposition (MPCVD) of Ga droplet in the presence of Au catalysts at 600 W. The morphology and structure of the products were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Large well alignment of network-like layered crystal beta-Ga2O3 structures that consisted of many nanobelts were formed on the Au-coated silicon substrate under the suitable vapor concentration. These novel beta-Ga2O3 nanostructures are expected to have potential application in functional nanodevices. (c) 2006 Elsevier B.V. All rights reserved.