We present the preparation of C54 TiSi2 nanoislands on Si (1 1 1) with a method of the pulsed laser deposition of titanium oxide thin films. The TiO2 thin films with nominal thicknesses of 1 nm on Si (1 1 1) were annealed at 850 degrees C for about 4 h in situ. The X-ray diffraction patterns and the X-ray photoelectron spectra indicate that the nanoislands are in C54 TiSi2 phase. The characterization using a scanning tunneling microscope shows that the nanoislands with triangular, polygonal and rod-like shapes on Si (1 1 1) exhibit the Volmer-Weber growth mode. The sizes of the polygonal islands distribute in two separated ranges. For the small islands, they have a narrow lateral size distribution centered at 4 nm and a height range in 0.6-3.6 nm, while for the large islands, their lateral sizes are in the range of 12-40 nm and the heights in the range of 4-9 nm. The sizes of the well-shaped triangular islands are intermediate with the lateral sizes in range of 5-20 nm and the heights of 2-3.5 nm. The rod-like islands are about 50-200 nm in length, 5 nm in height and about 15-20 nm in width. The origination of the various shapes of the nanoislands is attributed to the symmetry of Si (1 1 1) substrate and the lattice mismatch between the C54 TiSi2 and the Si (I 1 1) surface. (c) 2006 Elsevier B.V. All rights reserved.