Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique on glass substrate. Films evaporated at substrate temperature equal 523 K are stoichiometric and homogeneous. Effect of various growth parameters like rate of deposition and substrate temperature on the electrical properties has been studied in details. Also, the annealed at 673 K under vacuum for I h films have been analyzed for resistivity and Hall effect. (c) 2006 Elsevier B.V. All rights reserved.