Applied Surface Science, Vol.253, No.9, 4438-4444, 2007
Light induced adsorption of Si nano-composites in LiF crystals at 157 nm
Si nano-composites were precipitated on LiF crystals following ablation from Si targets with laser light at 157 nm. The LiF/Si interface was analyzed with scanning electron microscopy, atomic force microscopy and energy dispersive X-ray microanalysis. It was found that Si composites were strongly attached to LiF ionic sites to form inhomogeneous structures consisted of small isotropic crystals 0.1-1 mu m long, rich in Si and fluorine, which eventually further agglomerate to form larger structures. The thickness of the LiF/Si interface was increased from 50 nun to 2 mu m following laser irradiation at 157 nm, due to accelerated adsorption of Si in the LiF interface by VUV light. (c) 2006 Elsevier B.V. All rights reserved.
Keywords:silicon contamination;silicon adsorption in LiF;157 nm laser;vacuum ultraviolet light;interfaces