The ion flux dependence of the self-organized Si nanodots induced by 1.5 keV Ar+ ion sputter erosion has been studied. It shows that for the regime with ion flux >similar to 280 mu A/cm(2), the currently adopted Bradley-Harper (BH) model, which is incorporated in a dynamic continuum equation holds valid. However, for ion flux

Keywords:silicon;surface structure;morphology;roughening and topography;ion bombardment;atomic force microscopy