GaN phase is synthesized using systemic implantation of nitrogen ions of multiple energies (290, 130 and 50 keV) into Zn-doped GaAs (1 0 0) at room temperature and subsequent annealing at 850 degrees C for 30 min in Ar + H-2 atmosphere. The implanted doses of nitrogen ions are 5 x 10(16) and 1 x 10(17) ions-cm(-2). Glancing angle X-ray diffraction studies show that hexagonal phase of GaN were formed. The photolurninescence studies show the emission from the band edge as well as from point defects. (C) 2006 Elsevier B.V. All rights reserved.