Applications in optoelectronic integration have generated interest in the heteroepitaxy of III-V compounds on Si. However, the high dislocation density and high tensile stress in heteroepitaxial layers are serious problems in producing optical devices such as laser diodes. This article reports the growth of a high-quality InP layer on Si using a combination of organometallic vapor phase epitaxy and vapor mixing epitaxy. A laser diode has been produced whose stability with time is much better than that of a GaAs Si laser diode.