Advanced Materials, Vol.7, No.12, 997-1000, 1995
Scanning tunneling microscopy analysis of epitaxially crystallized IV-VI semiconductor surfaces and pn-junctions of IV-VI heterostructures
Communication: The characteristics of pn semiconductor junctions and the epitaxial layers at the interface are of great interest for the optimization of heterostructure device performance. Here, an STM study of narrow gap lead chalcogenide heterostructures is presented, providing insight into the influence of chemisorption of, for example, oxygen on the structure of the interface.