The growth rate of epitaxial Si in a chemical vapor deposition barrel reactor was investigated. Trichlorosilane was employed as a precursor diluted in H-2 carrier gas at 1 atm reactor pressure. The growth rates and the fluid dynamics were analyzed using a software package, ESTET. Finally, it was demonstrated that the Soret effect in our experimental conditions, influences up to 5% the predictive rate of deposition obtained when this effect was neglected.