Previous Article Next Article Table of Contents Advanced Materials, Vol.10, No.17, 1458-1461, 1998 DOI10.1002/(SICI)1521-4095(199812)10:17<1458::AID-ADMA1458>3.0.CO;2-W Export Citation FT-Raman studies of charged defects created on methyl end-capped oligothiophenes by doping with NOBF4 Casado J, Hernandez V, Hotta S, Navarrete JTL Please enable JavaScript to view the comments powered by Disqus.
