Advanced Materials, Vol.11, No.8, 653-653, 1999
A novel low-temperature synthetic route to crystalline Si3N4
Communication: A low-temperature preparation of crystalline Si3N4 is described that avoids the temperatures above 1200 degrees C necessary in other methods. Si(3)N(4)s chemical stability, high-temperature strength, and excellent creep resistance make it a promising Fe material for high-temperature engineering applications. The Figure shows a transmission electron microscopy image of a Si3N4 sample.