Advanced Materials, Vol.14, No.2, 134-134, 2002
Ferroelectric properties of porous silicon
Silicon-compatible ferroelectric random access memory (RAM) has come a step closer with the synthesis of porous silicon that exhibits ferroelectric properties despite its centrosymmetric crystal structure. The Figure shows the image of an iron-passivated porous silicon sample under a polarizing optical microscope, revealing the domain structure and the silicon pillar, in the inner part of the domains.