Communication: Low-temperature atomic layer deposition of STO films is demonstrated using oxygen remote plasma as the oxidation source instead of water vapor. The depositions are carried out on Si(100) substrates at 250degreesC from bis[1-(2-methoxyethoxy)-2,2,6,6,-tetramethyl-3,5-heptadionate] and Ti((OPr)-Pr-i)(4) precursors using a liquid delivery system. The thickness variation with cycle number shows good linearity, which assures ALD with a deposition rate of about 0.78 Angstrom/cycle. Analysis using XPS indicates that the deposit is stoichiometric with no evidence of carbonates such as SrCO3.