Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water

Kukli K; Ritala M; Sajavaara T; Keinonen J; Leskela M

Advanced Materials, Vol.14, No.17, A199-A199, 2002

Kukli K, Ritala M, Sajavaara T, Keinonen J, Leskela M

Full Paper: Stoichiometric HfO2 films have been atomic layer deposited in the temperature range of 150-325degreesC from Hf[N(CH3)(C2H5)](4) and water. The films (see Figure) crystallize at growth temperatures exceeding 175degreesC and consist mainly of monoclinic HfO2 phase. The refractive index of the films is found to vary between 2.08 and 2.1 and the effective permittivity of the HfO2 films grown in the temperature range 200-300degreesC varies between 11 and 14.

Keywords:atomic layer deposition;dielectrics;hafnium dioxide;ion beam analysis