Semiconductor nanowires, 5 to 20 nm in diameter and micrometers in length, appear to be promising candidates for a variety of new technologies, including computing, memory, and sensor applications. Suitable for these applications, silicon (Si) and germanium (Ge) nanowires ranging from 4 to 30 nm in diameter and micrometers in length can be produced in high temperature supercritical fluids by thermally degrading organosilane or organogermane precursors in the presence of organic-monolayer-protected gold nanocrystals. Although gas phase vapor-liquid-solid (VLS) methods can be used to produce a variety of different nanowire materials, high temperature supercritical fluids provide wire size control through nanocrystal size selection prior to synthesis, and high product yields due to the high precursor solubility.