The development of the self-organized growth of pentacence thin films on the channel region of a thin-film transistor (TFT) using surface modifications induced by organic vapor phase deposition is reported (see Figure). A bottom-contact TFT on plastic using an organic gate insulator of cross-linked poly-(4-vinylphenol) exhibited a field-effect mobility of 1.2 cm(2)/Vs and an on/off current ratio of similar to 10(7).