Advanced Materials, Vol.16, No.18, 1620-1620, 2004
Low-temperature processing of ferroelectric thin films compatible with silicon integrated circuit technology
Ferroelectric thin films have been fabricated at 723 K by UV-assisted rapid thermal sol-gel processing (see Figure). Films were deposited from inherently photosensitive sol-gel solutions. The low processing temperature makes the integration of these films with silicon semiconductor technology possible.