화학공학소재연구정보센터
Advanced Materials, Vol.17, No.1, 56-56, 2005
Orientation-controlled growth of single-crystal silicon-nanowire arrays
Silicon nanowire arrays on silicon substrates can be synthesized with precise orientation depending on the crystal orientation of the substrate using a vapor-liquid-solid epitaxial growth mechanism. The projections of the as-grown arrays form rectangular networks on silicon (100) substrates (see Figure), parallel straight lines on silicon (110) substrates, and triangular networks on silicon (111) substrates.