A novel chemically amplified negative-tone molecular resist for electron-beam (EB) lithography was developed. The base matrix had six furan rings as a reactive functional group at its terminal. The resist containing the matrix, a crosslinker and a photoacid generator worked well I Communication as a negative-tone resist with high sensitivity (3 mu C center dot cm(-2))(.) Line and space patterns (1:2) of 200 nm could be fabricated.