The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si(100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 mu m were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.