We have developed a single wafer rapid thermal processing (RTP) module for low-pressure chemical vapor deposition (LPCVD) of silicon nitride. Nitride films were grown from dichlorosilane (DCS) and ammonia at 740 degreesC under a pressure of 0.5 Torr. The DCS:NH3 gas flows of 25:75 sccm provided Si3N4 films 40 Angstrom thick in 1 min. Successive 25 wafer runs resulted in consistent average thickness and uniformity (below 1.0% 1 sigma). The within wafer thickness range (max-min) was less than 2 Angstrom. Conformal coverage over nonplanar substrates was also demonstrated. The hot-wall reactor configuration suppresses the condensation of NH4Cl byproduct.