We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being similar to3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 x 10(15) to 1.0 x 10(18) cm(-3) and the mobility is approximately 10(-1) cm(2) V-1 s(-1). The minimum film resistivity achieved is similar to20 Omega cm. (C) 2003 The Electrochemical Society.