Preparation of an epitaxially grown quartz (SiO2 with hexagonal structure) films with 30 mum thickness has been examined by a catalyst-enhanced vapor-phase epitaxy under atmospheric pressure (AP-CatVPE) using tetraethoxysilane (Si(OC2H5)(4)) and oxygen (O-2) as starting materials in the presence of gaseous hydrochloride (HCl). It is found that the AP-CatVPE is an excellent method for preparing high quality quartz films with a rapid growth rate. (C) 2003 The Electrochemical Society.