Two-dimensionally arrayed nanocolumns of InGaAsP/InP were fabricated using double-exposure laser holography and reactive ion etching (RIE). The size and period of nanocolumns could be controlled accurately from 80 to 150 nm in diameter and 220 to 450 nm in period by changing the incident angle of the laser beam. RIE for a typical time of 30 min using CH4/H-2 plasma enhanced the aspect ratio by more than 1.5 with a slight increase of the bottom width of columns. Furthermore, a wet-treatment after RIE showed a large enhancement of photoluminescence intensity, suggesting that the damage was cured effectively on the sidewalls of the nanocolumns. (C) 2003 The Electrochemical Society.