Symmetric gate-overlapped LDD poly-Si TFTs with selective and isotropic deposited Ni sub-gate

Chen BT; Tseng CH; Cheng HC; Chao CW; Chang TK; Lu JH; Chin A

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Electrochemical and Solid State Letters, Vol.7, No.2, G37-G39, 2004

Symmetric gate-overlapped LDD poly-Si TFTs with selective and isotropic deposited Ni sub-gate

Chen BT, Tseng CH, Cheng HC, Chao CW, Chang TK, Lu JH, Chin A

A novel fabrication process for self-aligned gate-overlapped lightly doped drain (SAGOLDD) thin-film transistors (TFTs) using excimer laser irradiation to form the graded LDD dopant profile and selectively plated Ni surrounding-gate to form the gate-overlap is demonstrated. The SAGOLDD TFT device exhibits much lower leakage current, higher on/off current ratio and better hot carrier stress endurance than self-aligned (SA) TFTs due to the lower electric field generated by graded LDD dopant profile. (C) 2004 The Electrochemical Society.