60 nm thick SrBi2Ta2O9 (SBT) thin films were fabricated using plasma-enhanced atomic layer deposition (ALD) with an alternating supply of single cocktail source and oxygen plasma. The linear relationship between the number of cycles and film thickness and a constant deposition rate with source pulse time suggests that a self-limiting process that has distinct characteristics of ALD was achieved. The 60 nm thick SrBi2Ta2O9 films that were annealed at 750degreesC completely crystallized to the layer-structured perovskite phase. The SBT capacitors showed excellent ferroelectric switching properties. Low voltage switching below 1.5 V was achieved successfully in the 60 nm SBT capacitor. (C) 2004 The Electrochemical Society.