High-dielectric barium-doped titanium silicon oxide films are prepared on silicon substrates by liquid phase deposition using hexafluorotitanic acid and barium nitrate as sources at low temperature. The elements of the films are barium, titanium, silicon, fluorine, and oxygen and uniformly distributed in the films examined by secondary-ion mass spectroscopy. The static dielectric constant and refractive index can reach about 35 and 2.01. From current-voltage measurement, the leakage current of the as-deposited film is about 9.18 x 10(-6) A/cm(2) at the electrical field intensity of 1 MV/cm. From capacitance-voltage measurement, the effective oxide charge is 4.32 x 10(11) cm(-2). These films have high potential for optoelectronic applications. (C) 2004 The Electrochemical Society.