The possibility for localized, spatially separated laser-induced deposition and etching of tungsten from pure WF6 gas is demonstrated. By employing a fused silica substrate covered with a tungsten layer, a threefold process is induced; deposition of tungsten in the center of the laser beam, etching of the tungsten-layer outside of the beam center and etching the excavated silica by fluorine radicals. This multiple process results in an effective drilling. The deposition of a conducting tungsten kernel inside a high aspect ratio hole, formed in the insulating silica, suggests the applicability to a single-step production of field emitter units. (C) 2004 The Electrochemical Society.