Highly uniform ZrO2 films were deposited by plasma enhanced atomic layer deposition (PEALD) using tetrakis(ethylmethylamino) zirconium (TEMAZ) and O-2 as precursors. The deposition rates were 0.14 and 0.11 nm/cycle at temperatures of 110 and 250 degrees C, respectively. ZrO2 films deposited at 150 degrees C contained approximate to 3% nitrogen, incorporated from the Zr-precursor, which contains four amino-groups. In the absence of a plasma, a ZrO2 film was not deposited with TEMAZ and O-2 at 150 degrees C. The electrical characteristics including breakdown strength and permitivity were also evaluated. The permitivities for 110 degrees C- and 200 degrees C-ZrO2 films were 16.1 and 26.9, respectively. (C) 2004 The Electrochemical Society.