Nanoporous GaN films are prepared by ultraviolet assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, microphotoluminescence, micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85- 90 nm with a transverse dimension of 75-85 nm. As compared to the starting as-grown GaN film, porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E-2(high) phonon peak in the Raman spectrum of porous GaN. (C) 2005 The Electrochemical Society.