HfO2 films with an EOT of 9 &ANGS; were deposited at 300° C on Ru/TiN/SiO2/Si substrates using an atomic layer deposition technique and the electrical properties of Ru/HfO2/Ru capacitors were investigated as a function of the film thickness and annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films with a thickness of 7 nm were, ∼ 19, 0.9%, and 8 x 10(-7) A/cm(2), respectively. The capacitors show the stable electrical properties in a thermal treatment up to 600° C. © 2005 The Electrochemical Society. All rights reserved.