A technique has been developed to transform a Si-Ge thin film into Si-Ge oxide nanowires with the assistance of Au particles through a three-step annealing process. A honeycomb network of Au colloidal nanoparticles was self-assembled; 400 degrees C annealing removes the surface surfactant; 800 degrees C annealing forms hexagonally self-assembled Au particles on the thin-film surface; finally, a 1075 degrees C annealing results in the growth of oxide nanowires on the surfaces of Au particles. Synthesized nanowires have an emission peak at 3.3 eV. This technique is useful for growing silicon oxide nanowires with a tunable amount of Ge doping. (c) 2005 The Electrochemical Society.