By means of low-temperature (400 C and below) wafer bonding and selective wafer thinning, microelectronics thin films are successfully transferred onto a silicon substrate wafer in a back-to-front fashion. The donor wafer is first attached to a handle wafer using oxide wafer bonding followed by selective etchback. Bond strength higher than 819 mJ/m(2) is needed to hold the thin films reliably on the handle wafer. Thin films are then permanently transferred to a silicon substrate wafer using thermocompression bonding of copper. Scanning electron microscopy images show good structural integrity of the thin films stack with no interfacial voids. (c) 2005 The Electrochemical Society.