화학공학소재연구정보센터
Electrochemical and Solid State Letters, Vol.9, No.1, G19-G21, 2006
Ultrashallow p(+)/n junction prepared by low energy BF3 plasma doping and KrF excimer laser annealing
We have investigated the activation and deactivation of the 1 kV BF3 plasma doping (PLAD) with excimer laser annealing (ELA). Half of the dopants were activated by ELA, and the deactivation was dramatically increased after the postannealing. We have confirmed that 1 kV BF3 PLAD did not form an amorphous layer at the substrate using X-ray transmission electron microscopy (X-TEM) and that boron and fluorine segregated after annealing using secondary ion mass spectroscopy profiles and plane- view TEM. Based on the results, we proved that fluorine can suppress boron diffusion, although it retards the activation and increases the deactivation of BF3 PLAD with ELA. (c) 2005 The Electrochemical Society. [DOI: 10.1149/1.2138448] All rights reserved.