This paper reports on an improved understanding for fabricating silicon nanowires (SiNWs) by rapid aluminum-induced crystallization (AIC) of plasma-enhanced chemical vapor deposited amorphous silicon (a-Si:H). The study indicates that during an AIC of a-Si:H process, Si nanograins were randomly created, self-assembled in preferred directions, and then interfused with adjacent nanograins to form silicon nanowires. This is quite different from the mechanisms that govern the growth of SiNWs by traditional vapor-liquid-solid and solid-liquid-solid methods. (c) 2006 The Electrochemical Society.